Process For The Manufacture Of A Semiconductor Device
AssigneeTechnische Universiteit Delft
InventorsRyoichi Ishihara, Michiel Van Der Zwan
Life of this patent
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Abstract
A method for the manufacture of at least part of a thin-film device including forming one or more indentations in a substrate, preferably a plastic substrate, an indentation having sidewalls and a base; filling at least one of the one or more indentations with a first ink, the first ink having a first material precursor, preferably a first metal-, semiconductor-, or a metal-oxide precursor; and, annealing at least a portion of the first ink such that a surface of the base inside the indentation is dewetted and a narrowed first structure of the first material inside of the indentation is formed.
Claims22
A method for the manufacture of at least part of a thin-film device, said method comprising:
- forming one or more indentations in a substrate, an indentation comprising sidewalls and a base;
- filling at least one of said one or more indentations with a first ink, said first ink comprising a first material precursor;
- and
- annealing at least a portion of said first ink such that a surface of said base inside the indentation is dewetted and a narrowed first structure of the first material inside of the indentation is formed.
Dependencies are inferred from the claim text.