Method for Manufacturing a Semiconductor Device Having a Channel Region in a Trench

Abstract

A method of manufacturing a semiconductor device includes forming a semiconductor diode by forming a drift region, forming a first semiconductor region of a first conductivity type in or on the drift region and electrically coupling the first semiconductor region to a first terminal via a first surface of a semiconductor body, etching a trench into the semiconductor body, and forming a channel region of a second conductivity type in the trench and electrically coupling the channel region to the first terminal via the first surface of the semiconductor body. A first side of the channel region adjoins the first semiconductor region.

Dependencies are inferred from the claim text.