Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
AssigneeHitachi Kokusai Electric Inc.
InventorsAtsushi SANO, Yoshiro HIROSE, Tsukasa KAMAKURA
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Abstract
Provided is a method of manufacturing a semiconductor device, which is capable of increasing the controllability of the concentration of carbon in a film by increasing the yield when a boron carbonitride film or a boron nitride film is formed. The method includes forming a film containing boron, carbon and nitrogen or a film containing boron and nitrogen on the substrate by performing, a predetermined number of times, a cycle including supplying a source gas consisting of boron and a halogen element to a substrate and supplying a reactive gas consisting of carbon, nitrogen and hydrogen to the substrate.
Claims14
A method of manufacturing a semiconductor device, comprising forming a film containing boron, carbon and nitrogen or a film containing boron and nitrogen on a substrate by performing, a predetermined number of times, a cycle comprising (a) supplying a source gas containing boron and a halogen element to the substrate and (b) supplying a reactive gas consisting of carbon, nitrogen and hydrogen to the substrate.
A substrate processing apparatus comprising:
- a process chamber configured to accommodate a substrate;
- a source gas supply system configured to supply a source gas containing boron and a halogen element into the process chamber;
- a reactive gas supply system configured to supply a reactive gas consisting of carbon, nitrogen and hydrogen into the process chamber;
- and
- a controller configured to control the source gas supply system and the reactive gas supply system to perform a formation of a film containing boron, carbon and nitrogen or a film containing boron and nitrogen on the substrate by performing, a predetermined number of times, a cycle comprising supplying the source gas to the substrate in the process chamber and supplying the reactive gas to the substrate in the process chamber.
A non-transitory computer-readable recording medium storing a program that causes a computer to perform a formation of a film containing boron, carbon and nitrogen or a film containing boron and nitride on a substrate by performing a predetermined number of times, a cycle comprising supplying a source gas containing boron and a halogen element to the substrate and supplying a reactive gas consisting of carbon, nitrogen and hydrogen to the substrate.
Dependencies are inferred from the claim text.