# US 2014/0370691 A1 · Vapor phase growth apparatus and vapor phase growth method

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- Number: US 2014/0370691 A1
- Document ID: US20140370691A1
- Status: Published application
- Kind: A1
- Application number: 14/301,666
- Filed: 2014-06-11
- Published: 2014-12-18
- Earliest claimed: 2013-06-13
- Assignees: NuFlare Technology, Inc.
- Applicants: NuFlare Technology, Inc.
- Inventors: Takumi YAMADA; Yuusuke SATO
- Web page: https://patentgrep.com/patent/US20140370691A1

## CPC

- C23C 16/45504: {Laminar flow}
- C23C 16/303: {Nitrides}
- C23C 16/45565: {Shower nozzles}
- C23C 16/45574: {Nozzles for more than one gas}
- C30B 25/14: Feed and outlet means for the gases; Modifying the flow of the reactive gases
- C30B 25/165: {the flow of the reactive gases}
- C23C 16/4401: {Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a shower plate disposed in the upper portion of the reaction chamber to supply a gas into the reaction chamber; a support portion provided below the shower plate inside the reaction chamber to place a substrate thereon; a process gas supply line that supplies a process gas; and a purging gas supply line that supplies a gas obtained by mixing first and second purging gases selected from hydrogen and an inert gas. Then, an inner area of the shower plate is provided with process gas ejection holes, and an outer area of the shower plate is provided with purging gas election holes. Then, the process gas supply line is connected to the process gas ejection holes, and the purging gas supply line is connected to the purging gas ejection holes.

## Claims

### Claim 1

A vapor phase growth apparatus comprising:
a reaction chamber;
a support portion provided inside the reaction chamber, the support portion configured to place a substrate thereon;
a first gas supply line supplying a first process gas;
a second gas supply line supplying a second process gas;
a purging gas supply line supplying a mixed gas obtained by mixing a first purging gas including at least one gas selected from hydrogen and an inert gas with a second purging gas including at least one gas selected from inert gases and having a molecular weight larger than that of the first purging gas; and
a shower plate disposed in the upper portion of the reaction chamber, the shower plate configured to supply a gas into the reaction chamber, the shower plate including:
a plurality of first lateral gas passages connected to the first gas supply line, the first lateral gas passages being disposed within a first horizontal plane, the first lateral gas passages extending in parallel to each other,
a plurality of first longitudinal gas passages connected to the first lateral gas passages, the first longitudinal gas passages extending in a longitudinal direction, the first longitudinal gas passages including first gas ejection holes, at a reaction chamber side of the shower plate,
a plurality of second lateral gas passages connected to the second gas supply line, the second lateral gas passages being disposed within a second horizontal plane above the first horizontal plane, the second lateral gas passages extending in parallel to each other in the same direction as that of the first lateral gas passages,
a plurality of second longitudinal gas passages connected to the second lateral gas passages, the second longitudinal gas passages extending in the longitudinal direction while passing between the first lateral gas passages, the second longitudinal gas passages including second gas ejection holes at the reaction chamber side of the shower plate, and
purging gas ejection holes connected to the purging gas supply line, the purging gas ejection holes being provided near the side wall of the reaction chamber in relation to the first and second gas ejection holes.

### Claim 2 (depends on 1)

The apparatus according to claim 1,
wherein the first or second process gas is ammonia, the first purging gas is hydrogen, and the second purging gas is nitrogen.

### Claim 3 (depends on 1)

The apparatus according to claim 1, further comprising:
a first purging gas supply line connected to the purging gas supply line, the first purging gas supply line having a first mass flow controller, the first purging gas supply line supplying the first purging gas;
a second purging gas supply line connected to the purging gas supply line, the second purging gas supply line having a second mass flow controller, the second purging gas supply line supplying the second purging gas; and
a control unit controlling the first mass flow controller and the second mass flow controller.

### Claim 4 (depends on 1)

The apparatus according to claim 1, further comprising:
a third gas supply line supplying a third process gas,
wherein the shower plate includes:
a plurality of third lateral gas passages connected to the third gas supply line, the third lateral gas passages being disposed within a third horizontal plane above the first horizontal plane and below the second horizontal plane, the third lateral gas passages extending in parallel to each other in the same direction as that of the first lateral gas passages, and
a plurality of third longitudinal gas passages connected to the third lateral gas passages, the third longitudinal gas passages extending in the longitudinal direction while passing between the first lateral gas passages, the third longitudinal gas passages including third gas ejection holes at the reaction chamber side of the shower plate.

### Claim 5 (depends on 4)

The apparatus according to claim 4,
wherein one of the first, second, and third process gases is ammonia, another one thereof is a gas including organic metal, the other one thereof is hydrogen, the first purging gas is hydrogen, and the second purging gas is nitrogen.

### Claim 6

A vapor phase growth apparatus comprising:
a reaction chamber;
a support portion provided inside the reaction chamber, the support portion configured to place a substrate thereon;
a first gas supply line supplying a first process gas;
a second gas supply line supplying a second process gas;
a purging gas supply line supplying a mixed gas obtained by mixing a first purging gas including at least one gas selected from hydrogen and an inert gas with a second purging gas including at least one gas selected from inert gases and having a molecular weight larger than that of the first purging gas; and
a shower plate disposed in the upper portion of the reaction chamber, the shower plate configured to supply a gas into the reaction chamber, the shower plate including:
first gas ejection holes connected to the first gas supply line, the first gas supply line being provided at a reaction chamber side of the shower plate,
second gas election holes connected to the second gas supply line, the second gas ejection holes being provided at the reaction chamber side of the shower plate, and
purging gas ejection holes connected to the purging gas supply line, the purging gas ejection holes being provided near the side wall of the reaction chamber in relation to the first and second gas ejection holes.

### Claim 7 (depends on 6)

The apparatus according to claim 6,
wherein the first or second process gas is ammonia, the first purging gas is hydrogen, and the second purging gas is nitrogen.

### Claim 8 (depends on 6)

The apparatus according to claim 6, further comprising:
a first purging gas supply line connected to the purging gas supply line, the first purging gas supply line having a first mass flow controller, the first purging gas supply line supplying the first purging gas;
a second purging gas supply line connected to the purging gas supply line, the second purging gas supply line having a second mass flow controller, the second purging gas supply line supplying the second purging gas; and
a control unit controlling the first mass flow controller and the second mass flow controller.

### Claim 9

A vapor phase growth method using a vapor phase growth apparatus including a reaction chamber, a shower plate disposed in the upper portion of the reaction chamber so as to supply a gas into the reaction chamber, and a support portion provided below the shower plate inside the reaction chamber so as to place a substrate thereon, the method comprising:
placing the substrate on the support portion;
heating the substrate;
ejecting a plurality of kinds of process gases for a film formation process from an inner area of the shower plate;
ejecting a mixed gas obtained by mixing a first purging gas selected from hydrogen and an inert gas and having a molecular weight smaller than that of an average molecular weight of the plurality of kinds of process gases with a second purging gas having a molecular weight larger than the average molecular weight from an outer area of the shower plate; and
forming a semiconductor film on the surface of the substrate.

### Claim 10 (depends on 9)

The method according to claim 9,
wherein organic metal and ammonia are included in the plurality of kinds of process gases, the first purging gas is hydrogen, and the second purging gas is nitrogen.

### Claim 11 (depends on 9)

The method according to claim 9,
wherein an average molecular weight of the mixed gas is equal to or larger than 80% and equal to or smaller than 120% of the average molecular weight of the plurality of kinds of process gases.