Reaction device and manufacture method for chemical vapor deposition
AssigneeIndustrial Technology Research Institute
InventorsYi-Tsung PAN, Mu-Jen YOUNG
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Abstract
A reaction device for chemical vapor deposition is disclosed. The reaction device includes a chamber, a susceptor, an inlet pipe unit and an outlet pipe. The susceptor is disposed within the chamber. The inlet pipe unit includes a plurality of feeding openings horizontally facing the peripheral area of the susceptor to input at least one reaction gas into the chamber. The at least one reaction gas is guided to move from the peripheral area of the susceptor and along a surface of the susceptor to reach the center of the susceptor. The outlet pipe includes a discharge opening whose position is corresponding to the center of the susceptor so as to discharge the reaction gas flowing to the center of the susceptor out of the chamber.
Claims19
A reaction device for chemical vapor deposition, comprising:
- a chamber;
- a susceptor disposed within the chamber;
- an inlet pipe unit comprising at least one feeding opening horizontally facing a peripheral area of the susceptor to input at least one reaction gas into the chamber, wherein the at least one reaction gas is guided to move from the peripheral area of the susceptor and along a surface of the susceptor to reach a center of the susceptor;
- and
- an outlet pipe comprising a discharge opening whose position is corresponding to the center of the susceptor so as to discharge the reaction gas flowing to the center of the susceptor out of the chamber.
A vapor organometallic epitaxy reaction process applied in a reactor to perform chemical vapor deposition, wherein a reaction product is semiconductor compound, a feeding method is vapor feeding, a reaction gas comprises an organometallic compound and a hydride gas, wherein
- the reactor comprises a feeding opening horizontally facing a peripheral area of the susceptor to input at least one reaction gas into the chamber, the at least one reaction gas is guided to move from peripheral area of the susceptor and along a surface of the susceptor to reach a center of the susceptor, and the reactor further comprises an outlet pipe comprising a discharge opening whose position is corresponding to the center of the susceptor so as to discharge the reaction gas flowing to the center of the susceptor out of the chamber.
A vapor organometallic epitaxy reaction process applied in a reactor to perform chemical vapor deposition, wherein a reaction product is group III/V semiconductor compound GaN, a feeding method is vapor feeding, a reaction gas comprises TMGa (trimethylgallium) and a hydride gas NH3, wherein
- the reactor comprises a feeding opening horizontally facing a peripheral area of the susceptor to input at least one reaction gas into the chamber, the at least one reaction gas is guided to move from peripheral area of the susceptor and along a surface of the susceptor to reach a center of the susceptor, and the reactor further comprises an outlet pipe comprising a discharge opening whose position is corresponding to the center of the susceptor so as to discharge the reaction gas flowing to the center of the susceptor out of the chamber.
Dependencies are inferred from the claim text.