Method for separating and transferring ic chips
AssigneeTokyo Electron Limited
InventorsMasahiro Yamada, Kenya Iwasaki, Hiroshi Nishikawa
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Abstract
A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on which the multiple number of semiconductor devices or semiconductor integrated circuits are formed is provided. The method includes forming a mask pattern on a surface of the wafer, and separating each of the semiconductor devices or semiconductor integrated circuits along the mask pattern formed on the surface of the wafer. The mask pattern is a repeated pattern without having a lattice line shape, and the step of separating each of the semiconductor devices or semiconductor integrated circuits is performed by plasma etching.
Claims7
A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on which the multiple number of semiconductor devices or semiconductor integrated circuits are formed, the method comprising:
- forming a mask pattern on a surface of the wafer;
- and
- separating each of the semiconductor devices or semiconductor integrated circuits along the mask pattern formed on the surface of the wafer,
- wherein the mask pattern is a repeated pattern without having a lattice line shape, and
- the step of separating each of the semiconductor devices or semiconductor integrated circuits is performed by plasma etching.
Dependencies are inferred from the claim text.