Back to results
US 2014/0370682 A1Published application
Method of manufacturing semiconductor device
AssigneePS4 Luxco S.a.r.l.
InventorMika NISHISAKA
Life of this patent
Estimating the term…
Abstract
Extension regions 7 are formed through implantation using offset sidewalls 6a of a footing profile as a mask, and sidewalls 9 are formed on the offset sidewalls 6a so that source and drain regions 10 are formed into the sidewall through implantation, so that the extension regions 7 are made separated away from both edges of the gate, contributing to enlargement in an effective gate length, and dealing with the narrowed gate pitch, without increasing the number of processes.
Claims8
A method of manufacturing a semiconductor device comprising:
- forming a gate electrode on a semiconductor substrate of a first conductive type;
- forming a first insulating film on the semiconductor substrate and the gate electrode;
- etching the first insulating film to form first sidewall spacers on both sides of the gate electrode;
- doping second conductive type impurities on a surface of the semiconductor substrate, using the first sidewall spacers as a mask;
- forming a second insulating film on the semiconductor substrate and the first sidewall spacers;
- etching the second insulating film to form second sidewall spacers on the first sidewall spacers;
- and
- doping second conductive type impurities on the surface of the semiconductor substrate using the second sidewall spacers as a mask,
- wherein each of the first sidewall spacers has a footing portion including a slope, and wherein an angle between a tangent line at a point of the slope and the surface of the semiconductor substrate becomes gradually small when the point becomes closer to the surface of the semiconductor substrate, and
- wherein the first sidewall spacers are formed by terminating the etching of the first insulating film when the layer under the first sidewall spacer is exposed.
7 more elements
Dependencies are inferred from the claim text.