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US 2014/0370680 A1Published application
Method of fabricating high voltage device
AssigneeUnited Microelectronics Corp.
InventorsYi-Hao Chen, Wen-Yu Lee, Hsiao-Wen Liu, Jung-Ching Chen
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Abstract
A method of fabricating a high voltage device includes the step of forming a patterned photoresist layer on a conductive layer and a dielectric below the conductive. The conductive layer and the dielectric layer are patterned by taking the patterned photoresist layer as a mask. Subsequently the patterned photoresist layer is shrunk. The conductive layer and the dielectric layer are then patterned by taking the shrunk photoresist layer as a mask.
Claims19
A method of fabricating a high voltage device, comprising:
- providing a substrate having a dielectric layer, a conductive layer and a photoresist layer disposed on the substrate from bottom to top;
- patterning the photoresist layer to form a patterned photoresist layer having a first width;
- performing a first patterning step to pattern the conductive layer and the dielectric layer by taking the patterned photoresist layer as a first mask;
- shrinking the first width of the patterned photoresist layer to a second width;
- performing a second patterning step to pattern the conductive layer and the dielectric layer by taking the shrunk photoresist layer as a second mask so as to form the dielectric layer into a step profile;
- and
- removing the shrunk photoresist layer.
4 more elements
A method of fabricating a high voltage device, comprising:
- providing a substrate having a dielectric layer, a conductive layer and a first photoresist layer disposed on the substrate from bottom to top;
- patterning the first photoresist layer to forma first patterned photoresist layer by utilizing a photo mask and a first exposure energy;
- performing a first patterning step to pattern the conductive layer and the dielectric layer by taking the first patterned photoresist layer as a first mask;
- removing the first patterned photoresist layer;
- forming a second photoresist layer on the conductive layer;
- patterning the second photoresist layer to form a second patterned photoresist layer by utilizing the photo mask and a second exposure energy;
- performing a second patterning step to pattern the conductive layer and the dielectric layer by taking the second patterned photoresist layer as a second mask so as to form the dielectric layer into a step profile;
- and
- removing the second patterned photoresist layer.
6 more elements
Dependencies are inferred from the claim text.