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US 2014/0370679 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorWan Cheul SHIN
Life of this patent
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Abstract
A semiconductor device according an aspect of the present disclosure may include an isolation layer formed within a substrate and formed to define an active region, a junction formed in the active region, well regions formed under the isolation layer, and a plug embedded within the substrate between the junction and the well regions and formed extend to a greater depth than the well regions.
Claims11
A method of manufacturing a semiconductor device, comprising:
- forming well regions within a substrate;
- forming an isolation layer, defining an active region, within the substrate in which the well regions are formed;
- forming a junction in the active region;
- and
- forming a plug embedded within the substrate between the junction and the well regions and formed to extend to a greater depth than the well regions.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- forming well regions within a substrate;
- forming an isolation layer, which defines an active region, within the substrate in which the well regions are formed;
- forming a junction in the active region;
- and
- forming an impurity region under the junction or between the isolation layer and the well regions.
2 more elements
Dependencies are inferred from the claim text.