Semiconductor device and manufacturing method thereof

A method of manufacturing a semiconductor device having a first region in which a vertical semiconductor element is disposed and a second region in which a lateral semiconductor element electrically isolated from the vertical semiconductor element by an isolating structure is disposed, the semiconductor device manufacturing method comprising:

• a first step of forming by epitaxial growth on a first semiconductor layer a first conductivity type first epitaxial layer with an impurity concentration lower than that of the first semiconductor layer;
• a second step of carrying out a first ion implantation of a first conductivity type impurity throughout the whole of a first region of the first epitaxial layer;
• a third step of selectively carrying out a second ion implantation of a second conductivity type impurity into the first region of the first epitaxial layer into which the first ion implantation has been carried out;
• a fourth step, after the third step, of forming by epitaxial growth on the first epitaxial layer a first conductivity type second epitaxial layer having an impurity concentration the same as that of the first epitaxial layer;
• a fifth step of carrying out a third ion implantation of a first conductivity type impurity into a region of the second epitaxial layer directly above a place of the first ion implantation and into a second region distanced from the region directly above the place of the first ion implantation;
• a sixth step, after the fifth step, of selectively carrying out a fourth ion implantation of a second conductivity type impurity into a region of the second epitaxial layer directly above a place of the second ion implantation;
• a seventh step, after the sixth step, of forming by epitaxial growth on the second epitaxial layer a first conductivity type third epitaxial layer having an impurity concentration the same as that of the second epitaxial layer;
• and
• an eighth step of diffusing by heat treatment the first conductivity type impurity and second conductivity type impurity ion implanted into the first epitaxial layer and second epitaxial layer, thereby forming a parallel pn-layer formed by the first conductivity type third semiconductor layer and second conductivity type fourth semiconductor layer connected from the first epitaxial layer to the third epitaxial layer being alternately disposed, and forming a fifth semiconductor layer connected across the second region of the second epitaxial layer and third epitaxial layer, thereby configuring an isolating structure.

A method of manufacturing a semiconductor device having a first region in which a vertical semiconductor element is disposed and a second region in which a lateral semiconductor element electrically isolated from the vertical semiconductor element by an isolating structure is disposed, the semiconductor device manufacturing method comprising:

• a first step of forming by epitaxial growth on a first conductivity type first semiconductor layer a first conductivity type first epitaxial layer with an impurity concentration lower than that of the first semiconductor layer;
• a second step of selectively carrying out a first ion implantation of a first conductivity type impurity into a first region of the first epitaxial layer;
• a third step of selectively carrying out a second ion implantation of a second conductivity type impurity into a region of the first epitaxial layer sandwiched by regions of the first ion implantation;
• a fourth step, after the third step, of forming by epitaxial growth on the first epitaxial layer a first conductivity type second epitaxial layer having an impurity concentration the same as that of the first epitaxial layer;
• a fifth step of carrying out a third ion implantation of a first conductivity type impurity into a region of the second epitaxial layer directly above a place of the first ion implantation and into a second region distanced from the region directly above the place of the first ion implantation;
• a sixth step, after the fifth step, of carrying out a fourth ion implantation of a second conductivity type impurity into a region of the second epitaxial layer directly above a place of the second ion implantation;
• a seventh step, after the sixth step, of forming by epitaxial growth on the second epitaxial layer a first conductivity type third epitaxial layer having an impurity concentration the same as that of the second epitaxial layer;
• and
• an eighth step of diffusing by heat treatment the first conductivity type impurity and second conductivity type impurity ion implanted into the first epitaxial layer and second epitaxial layer, thereby forming a parallel pn-layer formed by the first conductivity type third semiconductor layer and second conductivity type fourth semiconductor layer connected from the first epitaxial layer to the third epitaxial layer being alternately disposed, and forming a fifth semiconductor layer connected across the second region of the second epitaxial layer and third epitaxial layer, thereby configuring an isolating structure.

A method of manufacturing a semiconductor device having a first region in which a vertical semiconductor element is disposed and a second region in which a lateral semiconductor element electrically isolated from the vertical semiconductor element by an isolating structure is disposed, the semiconductor device manufacturing method comprising:

• a first step of forming by epitaxial growth on a first semiconductor layer a first conductivity type first epitaxial layer with an impurity concentration lower than that of the first semiconductor layer;
• a second step of carrying out a first ion implantation of a first conductivity type impurity throughout the whole of a first region of the first epitaxial layer;
• a third step of selectively carrying out a second ion implantation of a second conductivity type impurity into the first region of the first epitaxial layer into which the first ion implantation has been carried out;
• a fourth step, after the third step, of forming by epitaxial growth on the first epitaxial layer a first conductivity type second epitaxial layer having an impurity concentration the same as that of the first epitaxial layer;
• a fifth step of carrying out a third ion implantation of a first conductivity type impurity into a region of the second epitaxial layer directly above a place of the first ion implantation;
• a sixth step, after the fifth step, of selectively carrying out a fourth ion implantation of a second conductivity type impurity into a region of the second epitaxial layer directly above a place of the second ion implantation and into a second region distanced from the region directly above the place of the first ion implantation;
• a seventh step, after the sixth step, of forming by epitaxial growth on the second epitaxial layer a first conductivity type third epitaxial layer having an impurity concentration the same as that of the second epitaxial layer;
• and
• an eighth step of diffusing by heat treatment the first conductivity type impurity and second conductivity type impurity ion implanted into the first epitaxial layer and second epitaxial layer, thereby forming a parallel pn-layer formed by the first conductivity type third semiconductor layer and second conductivity type fourth semiconductor layer connected from the first epitaxial layer to the third epitaxial layer being alternately disposed, and forming a fifth semiconductor layer connected across the second region of the second epitaxial layer and third epitaxial layer, thereby configuring an isolating structure.

A method of manufacturing a semiconductor device having a first region in which a vertical semiconductor element is disposed and a second region in which a lateral semiconductor element electrically isolated from the vertical semiconductor element by an isolating structure is disposed, the semiconductor device manufacturing method comprising:

• a first step of forming by epitaxial growth on a first conductivity type first semiconductor layer a first conductivity type first epitaxial layer with an impurity concentration lower than that of the first semiconductor layer;
• a second step of selectively carrying out a first ion implantation of a first conductivity type impurity into a first region of the first epitaxial layer;
• a third step of selectively carrying out a second ion implantation of a second conductivity type impurity into a region of the first epitaxial layer sandwiched by places of the first ion implantation;
• a fourth step, after the third step, of forming by epitaxial growth on the first epitaxial layer a first conductivity type second epitaxial layer having an impurity concentration the same as that of the first epitaxial layer;
• a fifth step of carrying out a third ion implantation of a first conductivity type impurity into a region of the second epitaxial layer directly above a place of the first ion implantation;
• a sixth step, after the fifth step, of selectively carrying out a fourth ion implantation of a second conductivity type impurity into a region of the second epitaxial layer directly above a place of the second ion implantation and into a second region distanced from the region directly above the place of the first ion implantation;
• a seventh step, after the sixth step, of forming by epitaxial growth on the second epitaxial layer a first conductivity type third epitaxial layer having an impurity concentration the same as that of the second epitaxial layer;
• and
• an eighth step of diffusing by heat treatment the first conductivity type impurity and second conductivity type impurity ion implanted into the first epitaxial layer and second epitaxial layer, thereby forming a parallel pn-layer formed by the first conductivity type third semiconductor layer and second conductivity type fourth semiconductor layer connected from the first epitaxial layer to the third epitaxial layer being alternately disposed, and forming a fifth semiconductor layer connected across the second region of the second epitaxial layer and third epitaxial layer, thereby configuring an isolating structure.

A method of manufacturing a semiconductor device having a first region in which a vertical semiconductor element is disposed and a second region in which a lateral semiconductor element electrically isolated from the vertical semiconductor element by an isolating structure is disposed, the semiconductor device manufacturing method comprising:

• a first step of forming by epitaxial growth on a first conductivity type first semiconductor layer a first conductivity type first epitaxial layer with an impurity concentration lower than that of the first semiconductor layer;
• a second step of carrying out a first ion implantation of a first conductivity type impurity throughout the whole of the first epitaxial layer;
• a third step of selectively carrying out a second ion implantation of a second conductivity type impurity into a first region of the first epitaxial layer into which the first ion implantation has been carried out;
• a fourth step, after the third step, of forming by epitaxial growth on the first epitaxial layer a first conductivity type second epitaxial layer having an impurity concentration the same as that of the first epitaxial layer;
• a fifth step of carrying out a third ion implantation of a first conductivity type impurity throughout the whole of the second epitaxial layer;
• a sixth step, after the fifth step, of carrying out a fourth ion implantation of a second conductivity type impurity into a region of the second epitaxial layer directly above a place of the second ion implantation;
• a seventh step, after the sixth step, of forming by epitaxial growth on the second epitaxial layer a first conductivity type third epitaxial layer having an impurity concentration the same as that of the second epitaxial layer;
• and
• an eighth step of diffusing by heat treatment the first conductivity type impurity and second conductivity type impurity ion implanted into the first epitaxial layer and second epitaxial layer, thereby forming a parallel pn-layer formed by the first conductivity type third semiconductor layer and second conductivity type fourth semiconductor layer connected from the first epitaxial layer to the third epitaxial layer being alternately disposed, and forming a fifth semiconductor layer connected from the first semiconductor layer to the third epitaxial layer, thereby configuring an isolating structure.