Electronic Component with Reactive Barrier and Hermetic Passivation Layer

A method comprising:

• depositing a reactive barrier layer over a capacitor;
• depositing an insulating layer over the reactive barrier layer;
• providing a first metal interconnect comprising an upper portion formed over a lower portion, wherein the first metal interconnect is in contact with a first electrode of the capacitor, wherein the first metal interconnect passes through the reactive barrier layer enabling a direct electrical contact for the first electrode of the capacitor;
• and
• providing a second metal interconnect comprising an upper portion formed over a lower portion, wherein the second metal interconnect is in contact with a second electrode of the capacitor, wherein the second metal interconnect passes through the reactive barrier layer enabling a direct electrical contact for the second electrode of the capacitor.

A method comprising:

• depositing a reactive barrier layer over the capacitor;
• depositing a silicon nitride layer over the reactive barrier layer;
• providing a first metal interconnect comprising an upper portion formed over a lower portion, wherein the first metal interconnect is in contact with a first electrode of the capacitor, wherein the first metal interconnect passes through the reactive barrier layer enabling a direct electrical contact for the first electrode of the capacitor;
• and
• providing a second metal interconnect comprising an upper portion formed over a lower portion, wherein the second metal interconnect is in contact with a second electrode of the capacitor, wherein the second metal interconnect passes through the reactive barrier layer enabling a direct electrical contact for the second electrode of the capacitor.