US 2014/0370671 A1 · RELIABLE ELECTRICAL FUSE WITH LOCALIZED PROGRAMMING AND METHOD OF MAKING THE SAME

Abstract

An electrical fuse has an anode contact on a surface of a semiconductor substrate. The electrical fuse has a cathode contact on the surface of the semiconductor substrate spaced from the anode contact. The electrical fuse has a link within the substrate electrically interconnecting the anode contact and the cathode contact. The link comprises a semiconductor layer and a silicide layer. The silicide layer extends beyond the anode contact. An opposite end of the silicide layer extends beyond the cathode contact. A silicon germanium region is embedded in the semiconductor layer under the silicide layer, between the anode contact and the cathode contact.

Claims8

Dependent claims

A method for making an electrical fuse, the method comprising the steps of:

dividing a silicon substrate into a first region, a second region adjacent to the first region, and a third region adjacent to the second region, using shallow trench isolation;
creating a first recess in the first region and a second recess in the second region, using reactive ion etching;
growing silicon germanium in the first recess and the second recess;
forming silicide in the first region, above the silicon germanium grown in the first recess;
and
forming an anode contact and a cathode contact in the first region adjoining the silicide.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/454,041Filed 7 Aug 2014

Priority

27 Apr 2011

Published

18 Dec 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification14 codes

H10W 42/80
Arrangements for protection of devices: protecting against overcurrent or overload, e.g. fuses or shunts
G11C 17/16
In which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of…
H10D 64/0112
To Group IV semiconductors: using conductive layers comprising silicides
H10D 84/017
The components including complementary IGFETs, e.g. CMOS devices: manufacturing their source or drain regions, e.g. silicided source or drain regions

Reliable electrical fuse with localized programming and method of making the same

Life of this patent

Reliable electrical fuse with localized programming and method of making the same

Life of this patent

Abstract

Claims8