Method and system for a gallium nitride vertical jfet with self-aligned source and gate
AssigneeAvogy, Inc.
InventorsDon Disney, Isik C. Kizilyalli, Hui Nie, Linda Romano, Richard J. Brown, Madhan Raj
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Abstract
A semiconductor device includes a III-nitride substrate, a first III-nitride epitaxial layer coupled to the III-nitride substrate and having a mesa, and a second III-nitride epitaxial layer coupled to a top surface of the mesa. The semiconductor device further includes a III-nitride gate structure coupled to a side surface of the mesa, and a spacer configured to provide electrical insulation between the second III-nitride epitaxial layer and the III-nitride gate structure.
Claims15
A method for fabricating a vertical JFET, the method comprising:
- providing a III-nitride substrate of a first conductivity type;
- forming a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate;
- forming a second III-nitride epitaxial layer of the first conductivity type coupled to the first III-nitride epitaxial layer;
- forming a first masking layer coupled to the second III-nitride epitaxial layer;
- removing at least a portion of the first masking layer and the second III-nitride epitaxial layer to expose a vertical sidewall of the second III-nitride epitaxial layer and a horizontal surface of the first III-nitride epitaxial layer;
- forming a spacer coupled to the vertical sidewall of the second III-nitride epitaxial layer and the horizontal surface of the first III-nitride epitaxial layer;
- and
- removing at least a portion of the first III-nitride epitaxial layer to form a channel region of the vertical JFET, wherein the spacer is used as an etch mask.
A method for fabricating a vertical JFET, the method comprising:
- providing a III-nitride substrate;
- forming a first III-nitride epitaxial layer having a first surface coupled to the III-nitride substrate and a second surface substantially opposite the first surface;
- forming a second III-nitride epitaxial layer coupled to the second surface of the first III-nitride epitaxial layer;
- removing at least a portion of the second III-nitride epitaxial layer and the first III-nitride epitaxial layer to form a trench, wherein the trench has at least one sidewall disposed at an angle with respect to a dimension normal to the second surface;
- forming an insulating layer coupled to the at least one sidewall;
- removing a portion of the insulating layer to expose a portion of the at least one sidewall;
- and
- forming a III-nitride gate structure coupled to the portion of the at least one sidewall such that a portion of the insulating layer is disposed between the III-nitride gate structure and the second III-nitride epitaxial layer.
Dependencies are inferred from the claim text.