Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
A semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including the oxide semiconductor film subjected to the dehydration or dehydrogenation by the heat treatment and the oxygen doping treatment is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress test (BT test) can be reduced.
Claims21
(canceled)
A method for manufacturing a semiconductor device, comprising the steps of:
- providing a substrate, where an oxide semiconductor and an insulating film are provided, on a stage of a plasma apparatus,
- wherein the stage is connected to a high-frequency power source, and
- wherein the oxide semiconductor is provided over the substrate, and the insulating film is provided over the oxide semiconductor;
- and
- performing an oxygen doping treatment on the insulating film to supply oxygen into the insulating film by applying a high-frequency power from the high-frequency power source to the stage.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor over a substrate;
- forming a first insulating film over the oxide semiconductor;
- providing the substrate, where the oxide semiconductor and the first insulating film are provided, on a stage of a plasma apparatus, wherein the stage is connected to a high-frequency power source;
- performing an oxygen doping treatment on the first insulating film to supply oxygen into the first insulating film by applying a high-frequency power from the high-frequency power source to the stage;
- performing a heat treatment after performing the oxygen doping treatment;
- and
- forming a second insulating film over the first insulating film.
Dependencies are inferred from the claim text.