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US 2014/0370651 A1Published application
Method of manufacturing semiconductor device
AssigneeSanyo Electric Co., Ltd.
InventorsTakuo TOCHIHARA, Naoya SOTANI, Mitsuaki MORIGAMI
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Abstract
A semiconductor device includes a substrate made of a semiconductor material, an n-type semiconductor layer arranged on a portion of one principal surface of the substrate, and a p-type semiconductor layer arranged on a portion of the one principal surface of the substrate, the portion not provided with the n-type semiconductor layer. The n-type semiconductor layer includes a portion located right above the p-type semiconductor layer.
Claims7
A method of manufacturing a solar cell, comprising:
- forming a p-type semiconductor layer on a portion of one principal surface of a substrate made of a semiconductor material;
- forming an n-type semiconductor layer on the one principal surface of the substrate and also on the p-type semiconductor layer;
- etching at least part of a portion of the n-type semiconductor layer located above the p-type semiconductor layer by using an alkaline etchant;
- and
- forming a p-side electrode on the p-type semiconductor layer and forming an n-side electrode on the n-type semiconductor layer.
2 more elements
Dependencies are inferred from the claim text.