Polycrystalline CDTE Thin Film Semiconductor Photovoltaic Cell Structures for Use in Solar Electricity Generation
AssigneeUriel Solar, Inc.
InventorJames David Garnett
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Abstract
Solar cell structures formed using molecular beam epitaxy (MBE) that can achieve improved power efficiencies in relation to prior art thin film solar cell structures are provided. A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device using MBE are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.
Claims14
A method for forming a photovoltaic device, comprising:
- forming a first layer over a substrate, the first layer comprising tellurium (Te) and cadmium (Cd) or zinc (Zn);
- forming a second layer over the first layer, the second layer comprising Cd and Te;
- and
- forming a third layer over the second layer, the third layer comprising Cd, Zn and Te.
A method for forming a photovoltaic device, comprising:
- forming a low ohmic ZnTe:N++ contact layer over a superstrate;
- forming a p-type CdTe layer over the low ohmic ZnTe:N++ layer;
- forming an n-type, compositionally graded, CdZnTe layer over the p-type CdTe to form a p-n heterojunction;
- and
- forming a low ohmic CdZnTe:In++ contact layer over the p-n heterojunction.
A method for forming a photovoltaic device, comprising:
- forming a low ohmic ZnTe:N++ contact layer over a superstrate;
- forming an intrinsic CdTe (i-CdTe) layer over the low ohmic ZnTe:N++ layer;
- and
- forming a low ohmic CdZnTe:In++ contact layer over the i-CdTe layer.
A method for forming a high performance single junction photovoltaic device, comprising:
- forming a low ohmic CdTe:In++ contact layer over a superstrate;
- forming an n-type CdTe layer over the low ohmic CdTe:In++ layer;
- forming a p-type, compositionally graded, CdZnTe layer over the n-type CdTe to form a p-n heterojunction;
- and
- forming a low ohmic CdZnTe:As++ contact layer over the p-n heterojunction.
A method for forming a photovoltaic device, comprising
- forming an n-type layer having Cd and Te;
- forming an intrinsic CdTe layer over the n-type layer;
- and
- forming a p-type layer having Te and one or more of Cd and Zn over the intrinsic CdTe layer.
Dependencies are inferred from the claim text.