Method of manufacturing semiconductor device
AssigneeRenesas Electronics Corporation
InventorTadashi Yamaguchi
Life of this patent
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Abstract
An improvement is achieved in the performance of a semiconductor device. In a method of manufacturing the semiconductor device, in an n-type semiconductor substrate, a p-type well as a p-type semiconductor region forming a part of a photodiode is formed and a gate electrode of a transfer transistor is formed. Then, after an n-type well as an n-type semiconductor region forming the other part of the photodiode is formed, a microwave is applied to the semiconductor substrate to heat the semiconductor substrate. Thereafter, a drain region of the transfer transistor is formed.
Claims20
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) providing a semiconductor substrate having a first conductivity type;
- (b) after the step (a), forming, in the semiconductor substrate, a first semiconductor region having a second conductivity type opposite to the first conductivity type and forming a part of a photodiode;
- (c) forming, over the semiconductor substrate, a gate electrode of a transfer transistor which transfers charges generated by the photodiode;
- (d) forming a second semiconductor region having the first conductivity type and forming the other part of the photodiode such that the second semiconductor region is included in the first semiconductor region;
- (e) after the step (d), applying a microwave to the semiconductor substrate to heat the semiconductor substrate;
- (f) after the step (e), forming, in the semiconductor substrate, a drain region of the transfer transistor;
- and
- (g) after the step (f), forming an interlayer insulating film over the semiconductor substrate.
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) providing a semiconductor substrate having a first conductivity type;
- (b) after the step (a), forming, in the semiconductor substrate, a first semiconductor region having a second conductivity type opposite to the first conductivity type and forming a part of a photodiode;
- (c) after the step (b), applying a microwave to the semiconductor substrate to heat the semiconductor substrate;
- (d) forming, over the semiconductor substrate, a gate electrode of a transfer transistor which transfers charges generated by the photodiode;
- (e) after the step (c), forming a second semiconductor region having the first conductivity type and forming the other part of the photodiode such that the second semiconductor region is included in the first semiconductor region;
- (f) after the step (e), forming, in the semiconductor substrate, a drain region of the transfer transistor;
- and
- (g) after the step (f), forming an interlayer insulating film over the semiconductor substrate.
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) providing a semiconductor substrate having a first conductivity type;
- (b) after the step (a), forming, in the semiconductor substrate, a first semiconductor region having a second conductivity type opposite to the first conductivity type and forming a part of a photodiode;
- (c) forming, over the semiconductor substrate, a gate electrode of a transfer transistor which transfers charges generated by the photodiode;
- (d) forming a second semiconductor region having the first conductivity type and forming the other part of the photodiode such that the second semiconductor region is included in the first semiconductor region;
- (e) after the step (d), forming, in the semiconductor substrate, a drain region of the transfer transistor;
- (f) after the step (e), applying a microwave to the semiconductor substrate to heat the semiconductor substrate;
- and
- (g) after the step (f), forming an interlayer insulating film over the semiconductor substrate.
Dependencies are inferred from the claim text.