Process of forming a back side illumination image sensor
AssigneeHimax Imaging Limited
InventorsYANG WU, INNA PATRICK
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Abstract
A process of forming a back side illumination (BSI) image sensor is disclosed. An n-type implant is formed in a semiconductor substrate, and a p-type implant region, surrounding n-type in each pixel, is formed in the n-type implant such that in cross sectional view an n-type implant region is sandwiched between the two p-type implant regions. A transfer gate is formed on the semiconductor substrate such that the transfer gate entirely covers the n-type implant region and at least partially covers each of the p-type implant regions. A floating diffusion is formed in one of the p-type implant regions.
Claims10
A process of forming a back side illumination (BSI) image sensor, comprising:
- forming an n-type implant in a semiconductor substrate, the n-type implant including an n-type implant region;
- forming a p-type implant region surrounding the n-type implant such that in cross sectional view the n-type implant region is sandwiched between the two p-type implant regions;
- forming a transfer gate on the semiconductor substrate such that the transfer gate entirely covers the n-type implant region and at least partially covers each of the p-type implant regions;
- and
- forming a floating diffusion in one of the p-type implant regions.
Dependencies are inferred from the claim text.