EXTENDED GATE SENSOR FOR pH SENSING
AssigneeInternational Business Machines Corporation
InventorsTimothy J. Dalton, Ashish V. Jagtiani, Ramachandran Muralidhar, Sufi Zafar
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Abstract
A sensing device includes a substrate having a source region and a drain region formed therein. A gate structure is formed over the substrate and includes a gate dielectric and a gate conductor. The gate conductor is formed on the gate dielectric and disposed between the source region and the drain region. A dielectric layer is formed over the substrate and has a depth configured to form a well over the gate conductor. A gate extension is formed in contact with or as part of the gate conductor and including a conductive material covering one or more surfaces of the well.
Claims4
A method for forming a pH sensing device, comprising:
- forming a gate structure over a substrate including a gate dielectric, a gate conductor and a dummy material, the gate conductor being formed on the gate dielectric and disposed between the source region and the drain region;
- forming a dielectric layer over the substrate and the gate structure;
- planarizing the dielectric layer to expose the dummy material;
- removing the dummy material to form a well;
- and
- forming a gate extension in contact with the gate conductor and including a conductive material covering one or more surfaces of the well.
Dependencies are inferred from the claim text.