Method for fabricating nitride semiconductor thin film and method for fabricating nitride semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKeon Hun LEE, Min Ho KIM, Jong Uk SEO, Suk Ho YOON, Kee Won LEE, Sang Don LEE, Ho Chul LEE
Life of this patent
Estimating the term…
Abstract
A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.
Claims20
A method for fabricating a nitride semiconductor thin film, the method comprising:
- preparing a first nitride single crystal doped with an n-type impurity;
- forming a plurality of etch pits in a surface of the first nitride single crystal by applying an etching gas thereto;
- and
- growing a second nitride single crystal on the first nitride single crystal having the etch pits formed therein.
A method for fabricating a nitride semiconductor thin film, the method comprising:
- preparing a first nitride single crystal layer doped with an n-type impurity;
- forming a plurality of etch pits in a surface of the first nitride single crystal by applying an etching gas thereto;
- growing a second nitride single crystal on the first nitride single crystal having the etch pits formed therein;
- and
- growing a semiconductor light emitting laminate including an active layer on the second nitride single crystal.
A method for fabricating a nitride semiconductor thin film, the method comprising:
- preparing a first nitride single crystal doped with an n-type impurity;
- forming a plurality of etch pits in a surface of the first nitride single crystal by applying an etching gas thereto;
- and
- growing a second nitride single crystal on the first nitride single crystal such that the formed etch pits are filled with the second nitride single crystal.
Dependencies are inferred from the claim text.