Monitoring laser processing of semiconductors by raman spectroscopy
AssigneeApplied Materials, Inc.
InventorJiping LI
Life of this patent
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Abstract
A Raman probe is used to detect crystal structure of a substrate undergoing thermal processing in a thermal processing system. The Raman probe may be coupled to a targeting system of a laser thermal processing system. The Raman probe includes a laser positioned to direct probe radiation through the targeting system to the substrate, a receiver attuned to Raman radiation emitted by the substrate, and a filter that blocks laser radiation reflected by the substrate. The Raman probe may include more than one laser, more than one receiver, and more than one filter. The Raman probe may provide more than one wavelength of incident radiation to probe the substrate at different depths.
Claims20
A system for thermally treating a substrate, comprising:
- a source of thermal processing radiation;
- a substrate support disposed to receive the thermal processing radiation from the source at a target location;
- an optical system disposed along a path of the thermal processing radiation;
- and
- a Raman probe coupled to the optical system.
An apparatus for thermally processing a substrate, comprising:
- a source of thermal processing radiation;
- a substrate support disposed to expose a target to the thermal processing radiation;
- and
- a Raman probe comprising a first laser and a second laser, the first and second lasers being disposed to direct a first probe radiation and a second probe radiation, respectively, to the target.
A method of processing a substrate, comprising:
- changing the crystal structure of a portion of the substrate by directing thermal processing radiation to the portion of the substrate;
- and
- measuring a distribution of crystal grain size using Raman spectroscopy.
Dependencies are inferred from the claim text.