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AssigneeAz Electronic Materials (Luxembourg) S.A.R.L.
InventorsM. Dalil RAHMAN, Clement ANYADIEGWU, Douglas MCKENZIE, Takanori KUDO, Elizabeth WOLFER, Salem K. MULLEN
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The present invention relates to an absorbing hard mask antireflective coating composition comprising a novel polymer, where the novel polymer comprises in the backbone of the polymer four repeat units -A-, -B-, -C- and -D-, where A is repeat unit which comprises a fused aromatic ring in its backbone, B has the structure (1), C is a hydroxylbiphenyl of structure (2) and D is a derivatized fluorene of structure (3), where R1 is C1-C4alkyl, R2 is C1-C4alkyl, R3 and R4 are independently hydrogen or C1-C4 alkyl, and Ar′ and Ar″ are independently phenylenic, or naphthalenic derived moieties, R5 and R6 are independently —OH or —CH2)nOH where n=2-4, and R7 and R8 are independently hydrogen or C1-C4 alkyl. This invention also relates to a process for forming an image using the novel antireflective coating composition.
An antireflective coating composition comprising a polymer capable of being crosslinked, where the polymer comprises at least one repeat unit (A) comprising a fused aromatic unit in the polymer backbone, at least one repeat unit (B) having a structure (1), at least one repeat unit (C) comprising hydroxybiphenyl repeat unit of structure (2), and at least one repeat unit (D) comprising a fluorene repeat unit of structure (3),
The process of claim 20, where the photoresist is imageable with radiation from about 240 nm to about 12 nm.
The process of claim 20, where the second antireflective coating layer comprises silicon.
Dependencies are inferred from the claim text.