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US 2014/0370441 A1Published application
Developer for photosensitive resist material and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Masaki Ohashi
Life of this patent
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Abstract
An aqueous solution containing 0.1-20 wt % of a cyclic ammonium hydroxide is a useful developer for photosensitive resist materials. A resist pattern is formed by applying a chemically amplified positive resist composition onto a substrate to form a resist film, exposing the resist film to high-energy radiation, and developing the exposed resist film in a cyclic ammonium hydroxide-containing aqueous solution.
Claims10
A developer for photosensitive resist materials comprising a cyclic ammonium hydroxide having the general formula (1):
- wherein R1 and R2 each are a straight, branched or cyclic C1-C6 alkyl group or C2-C10 alkenyl or alkynyl group, and R3 is methylene, ethylene, —O—CH2—, —S—CH2— or —NH—CH2—.
Dependencies are inferred from the claim text.