Substrate with transparent electrode and method for manufacturing same

A substrate with a transparent electrode, comprising:

• a transparent film base material;
• and a crystalline transparent electrode layer on at least one surface of the transparent film base material, wherein
• the transparent film base material has a transparent dielectric material layer containing an oxide as a main component on a surface at the crystalline transparent electrode layer side,
• the crystalline transparent electrode layer has a resistivity of 3.5×10−4 Ω·cm or less, a thickness of 15 nm to 40 nm, an indium oxide content of 87.5% to 95.5%, a carrier density of 4×1020/cm3 to 9×1020/cm3, and a crystallinity degree of 80% or more, and
• a heat shrinkage start temperature as measured by thermomechanical analysis is 75° C. to 120° C.

A substrate with the transparent electrode, comprising:

• a transparent film base material;
• and an amorphous transparent electrode layer on at least one surface of the transparent film base material, wherein
• the transparent film base material has a transparent dielectric material layer containing an oxide as a main component on a surface at an amorphous transparent electrode layer side,
• the amorphous transparent electrode layer has a thickness of 15 nm to 40 nm, an indium oxide content of 87.5% to 95.5%, and a crystallinity degree of less than 80%,
• an activation energy at a time of crystallizing the amorphous transparent electrode layer is 1.3 eV or less, and
• a heat shrinkage start temperature as measured by thermomechanical analysis is 75° C. to 120° C.

A method for manufacturing a substrate with a transparent electrode, which comprises a transparent film base material and a crystalline transparent electrode layer on at least one surface of the transparent film base material, the transparent electrode layer having a resistivity of 3.5×10−4 Ω·cm or less and a crystallinity degree of 80% or more, the method comprising:

• a base material providing step of providing a transparent film base material;
• a deposition step of forming an amorphous transparent electrode layer having a thickness of 15 nm to 40 nm and an indium oxide content of 87.5% to 95.5% on a transparent dielectric material layer of the transparent film base material by a sputtering method;
• and
• a crystallization step of crystallizing the amorphous transparent electrode layer to obtain a crystalline transparent electrode layer, wherein
• in the deposition step, the deposition is performed at an oxygen partial pressure of 1×10−3 Pa to 5×10−3 Pa in a deposition chamber while a carrier gas including an inert gas and an oxygen gas is introduced into the chamber, and
• in the crystallization step, the transparent film base material and the transparent electrode layer are not heated to 120° C. or higher.