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US 2014/0370204 A1Published application
Vapor Deposition Reactor Using Plasma and Method for Forming Thin Film Using the Same
AssigneeVeeco ALD Inc.
InventorSang In Lee
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Abstract
A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor.
Claims10
A method for forming thin film on a substrate in a vapor deposition reactor, comprising:
- applying voltage between a first electrode and a second electrode to generate plasma;
- providing reactant gas to the generated plasma to generate radicals;
- providing the generated radials onto the substrate via a first channel and at least one first injection hole connected to the first channel, the first channel and the at least one injection hole formed in the first electrode;
- and
- moving a substrate relative to the first electrode and the second electrode to expose the substrate to the radicals provided by the at least one first injection hole.
2 more elements
Dependencies are inferred from the claim text.