Group III Nitride Crystal Substrates and Group III Nitride Crystal

Abstract

Group III nitride crystal produced by cutting, from III nitride bulk crystal, a plurality of Group III nitride crystal substrates with major-surface plane orientation misoriented five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates adjacent to each other such that their major surfaces are parallel to each other and such that their [0001] directions coincide with each other, and growing a Group III nitride crystal on the major surfaces. The Group III nitride crystal substrates are further characterized by satisfying at least either an oxygen-atom concentration of 1×1016 cm−3 to 4×1019 cm−3 or a silicon-atom concentration of 6×1014 cm−3 to 5×1018 cm−3, and by having a carrier concentration of 1×1016 cm−3 to 6×1019 cm−3.

Dependencies are inferred from the claim text.