Tunable laser emission device

A fabrication process for fabricating a wavelength tunable laser emission device, the process comprising:

• making a second monolithic optical component (20, 102) comprising a second waveguide (5, 105) made of silicon on silicon dioxide and extending in a longitudinal direction of the second monolithic optical component, the second waveguide comprising a distributed reflector (9, 109) along the second waveguide, the second waveguide comprising transverse zones (11, 12, 13, 14;
• 111, 112, 113, 114, 46, 47, 48) doped differently so as to form a polar junction oriented in a transverse direction of the second optical component, the second monolithic optical component comprising a superficial layer (8, 108) of silicon dioxide of small thickness covering the second waveguide at an upper surface of the second optical component,
• adhesively bonding a first monolithic optical component (30, 130) made of materials from group III-V on the upper surface (51) of the second optical component, the first monolithic optical component comprising a light-amplifying guiding layer (31, 131), making a first waveguide in the first monolithic optical component, the first waveguide being made in an aligned manner by lithography with the second waveguide,
• forming on the first monolithic optical component first electrodes (35, 36;
• 135, 136) for controlling the optical amplification gain, and
• forming on the second monolithic optical component second electrodes (15, 16;
• 115, 116) coupled to the doped transverse zones of the second waveguide so as to modify an effective index of the second waveguide.