Methods of forming three-dimensionally integrated semiconductor systems including photoactive devices and semiconductor-on-insulator substrates

A three-dimensionally integrated semiconductor system, comprising:

• a semiconductor-on-insulator (SeOI) substrate comprising:
• a layer of semiconductor material;
• and
• a layer of electrically insulating material disposed adjacent a major surface of the layer of semiconductor material;
• at least one photoactive device formed on the layer of semiconductor material of the SeOI substrate;
• and
• at least one optical interconnect comprising a portion of the layer of semiconductor material of the SeOI substrate, the at least one optical interconnect operatively coupled to the at least one photoactive device;
• at least one current/voltage converter formed over the layer of semiconductor material of the SeOI substrate;
• at least one electrical pathway extending between the at least one photoactive device and the at least one current/voltage converter;
• at least one semiconductor device bonded over the SeOI substrate;
• and
• at least one electrical pathway extending between the at least one current/voltage converter and the at least one semiconductor device bonded over the SeOI substrate.