Word line drivers and semiconductor memory devices including the same
AssigneeSK hynix Inc.
InventorSang Il PARK
Life of this patent
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Abstract
Word line drivers including a selection signal generator and a word line drive unit are provided. The selection signal generator generates a selection signal which is enabled according to a high-order address signal and a low-order address signal in an active mode. Further, the selection signal generator generates a complementary selection signal which is enabled when an equalization signal is inputted in a pre-charge mode after the active mode. The word line driver receives the main word line signal to drive a word line to have a first level when the selection signal is enabled, to drive the word line to have a second level when the selection signal is disabled, and to drive the word line to have a third level when the complementary selection signal is enabled.
Claims24
A semiconductor memory device comprising:
- a command decoder configured to generate a main word line signal in an active mode, configured to generate a control signal in a standby mode, and configured to generate an equalization signal in a pre-charge mode;
- and
- a word line driver configured to drive a word line to a first level in response to the main word line signal, configured to drive the word line to a second level in response to the control signal, and configured to drive the word line to a third level in response to the equalization signal.
A word line driver comprising:
- a selection signal generator configured to generate a selection signal which is enabled according to a high-order address signal and a low-order address signal in an active mode, configured to generate a complementary selection signal which is enabled when an equalization signal is inputted in a pre-charge mode after the active mode;
- and
- a word line drive unit configure to receive the main word line signal to drive a word line to have a first level when the selection signal is enabled, to drive the word line to have a second level when the selection signal is disabled, and to drive the word line to have a third level when the complementary selection signal is enabled.
A semiconductor memory device comprising:
- a command decoder configured to generate a main word line signal, configured to generate a control signal, and configured to generate an equalization signal;
- and
- a word line driver configured to drive a word line to a first level in response to the main word line signal, configured to drive the word line to a second level in response to the control signal, and configured to drive the word line to a third level in response to the equalization signal.
Dependencies are inferred from the claim text.