Systems and methods for providing high voltage to memory devices

An apparatus, comprising:

• a low voltage input to receive a first voltage;
• and
• a two-rail level shifting circuit coupled to the low voltage input, the two-rail level shifting circuit to one of:
• increase the first voltage to a second voltage that is greater than the first voltage when programming and erasing a memory device, wherein an amount of the second voltage is based on an amount of the first voltage, and
• decrease the first voltage to a third voltage that is less than or equal to a ground potential when programming and erasing the memory device, wherein an amount of the third voltage is based on an amount of the first voltage.

The apparatus of claim 12, wherein the two-rail level shifting circuit is to increase the first voltage, the two-rail level shifting circuit comprising:

• a first node coupled to the low voltage input;
• a first n-channel metal oxide semiconductor field-effect transistor (nMOSFET) comprising a first gate coupled to the first node, a first source, and a first extended drain;
• an inverter comprising an input coupled to the first node and an output;
• a second nMOSFET comprising a second gate coupled to the output, a second source, and a second extended drain;
• a latch comprising a pair of cross-coupled inverters coupled to the first source and the second source;
• a second node coupled to the first extended drain and the latch;
• a third node coupled to the second extended drain and the latch;
• a complement output coupled to the second node, the complement output providing the first positive voltage if the first voltage is equal the ground potential and providing the second positive voltage if the first voltage is greater than the ground potential;
• and
• a true output coupled to the third node, the true output providing the first positive voltage if the first voltage is greater than the ground potential and providing the second positive voltage if the first voltage is equal to the ground potential, wherein:
• the true output is provided to the memory device when programming and erasing the memory device.

A system, comprising:

• a low voltage input to receive a first voltage;
• and
• a two-rail level shifting circuit coupled to the low voltage input, the two-rail level shifting circuit to:
• increase the first voltage to a second voltage, which is a positive voltage, if the first voltage is equal to a ground potential,
• decrease the first voltage to a third voltage, which is a negative voltage, if the first voltage is greater than the ground potential, and
• provide one of the second voltage and the third voltage to a memory device when programming and erasing the memory device.

A method, comprising:

• receiving, at the two-rail level shifting circuit, a first voltage;
• translating, by the two-rail level shifting circuit, the first voltage to generate one of a plurality of output voltages based on an amount of the first voltage;
• and
• providing the one of the plurality of output voltages to a memory device when programming and erasing the memory device.