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US 2014/0369130 A1Published application
Local self-boost using a plurality of cut-off cells on a single side of a string of memory cells
AssigneeMicron Technology, Inc.
InventorsKoji Sakui, Yasushi Matsuyama, Ryan G. Fisher
Life of this patent
Estimating the term…
Abstract
Methods for local self-boost of a selected memory cell channel, memory devices, and systems are disclosed. One such method generates a cut-off channel under each of a plurality of memory cells on one of either a source side or a drain side of a selected memory cell.
Claims20
A method of operating a memory during a programming operation, comprising:
- biasing a control gate of a selected memory cell of a string of memory cells with a programming voltage sufficient to change a threshold voltage of a memory cell selected for programming during the programming operation;
- biasing a control gate of a first unselected memory cell of the string of memory cells with a voltage configured to turn off the first unselected memory cell;
- biasing a control gate of a second unselected memory cell of the string of memory cells with a voltage configured to turn off the second unselected memory cell;
- biasing control gates of at least one third unselected memory cell of the string of memory cells between the first unselected memory cell and the selected memory cell with voltages configured to turn on each third unselected memory cell;
- and
- biasing control gates of at least one fourth unselected memory cell of the string of memory cells between the first unselected memory cell and the second unselected memory cell with voltages configured to turn on each fourth unselected memory cell;
- wherein the first unselected memory cell is between a particular end of the string of memory cells and the selected memory cell;
- and
- wherein the second unselected memory cell is between the particular end of the string of memory cells and the first unselected memory cell.
6 more elements
A method of operating a memory during a programming operation, comprising:
- biasing a control gate of a selected memory cell of a string of memory cells with a programming voltage sufficient to change a threshold voltage of a memory cell selected for programming during the programming operation;
- biasing a control gate of a first unselected memory cell of the string of memory cells with a voltage configured to turn off the first unselected memory cell;
- biasing a control gate of a second unselected memory cell of the string of memory cells with a voltage configured to turn off the second unselected memory cell;
- biasing control gates of remaining memory cells of the string of memory cells with voltages configured to turn on each remaining memory cell;
- wherein the first unselected memory cell is between a particular end of the string of memory cells and the selected memory cell;
- and
- wherein the second unselected memory cell is between the particular end of the string of memory cells and the first unselected memory cell.
4 more elements
A method of operating a memory during a programming operation, comprising:
- biasing a control gate of a selected memory cell of a string of memory cells with a programming voltage sufficient to change a threshold voltage of a memory cell selected for programming during the programming operation;
- biasing a control gate of a first unselected memory cell of the string of memory cells with a voltage configured to turn off the first unselected memory cell;
- biasing a control gate of a second unselected memory cell of the string of memory cells with a voltage configured to turn off the second unselected memory cell;
- biasing a control gate of a third unselected memory cell of the string of memory cells with a voltage configured to turn off the third unselected memory cell;
- biasing control gates of remaining memory cells of the string of memory cells with voltages configured to turn on each remaining memory cell;
- wherein the first unselected memory cell is between a particular end of the string of memory cells and the selected memory cell;
- wherein the second unselected memory cell is between the particular end of the string of memory cells and the first unselected memory cell;
- and
- wherein the third unselected memory cell is between the selected memory cell and an end of the string of memory cells opposite the particular end of the string of memory cells.
6 more elements
Dependencies are inferred from the claim text.