Semiconductor device, data programming device, and method for improving the recovery of bit lines of unselected memory cells for programming operation

A method comprising:

• performing a program operation, the program operation including a plurality of phases, on a non-volatile memory array comprising:
• first and second selection lines,
• a plurality of word lines,
• a plurality of bit lines,
• a plurality of NAND memory strings each including:
• a first selection transistor coupled to an associated one of the bit lines and including a gate coupled to the first selection line,
• a second selection transistor including a gate coupled to the second selection line, and
• a plurality of memory cells coupled between the first and second selection transistors and each including a gate coupled to an associated one of the word lines;
• the performing of the program operation comprising:
• selecting one or more of the bit lines as a selection bit line;
• selecting a remaining of the bit lines as a non-selection bit line;
• generating from a power supply voltage a first voltage that is higher than the power supply voltage, the first voltage and the power supply voltage being higher than a ground voltage potential;
• supplying the ground voltage potential to the selection bit line so that memory cells associated with the selection bit line are allowed to be shifted to a program condition;
• supplying the power supply voltage to the non-selection bit line until the non-selection bit line reaches a target voltage, the target voltage being less than the first voltage and being equal to or less than the power supply voltage;
• and
• supplying the first voltage to the non-selection bit line so that memory cells associated with the non-selection bit line are prevented from being shifted to a program condition, wherein the supplying of the first voltage to the non-selection bit line is performed after the non-selection bit line reaches the target value, further wherein the supplying the power supply voltage to the non-selection bit line and the supplying the first voltage to the non-selection bit line are performed during a single phase of the program operation.