Memory systems including nonvolatile memory devices and dynamic access methods thereof
AssigneesSamsung Electronics Co., Ltd., Snu R&Db Foundation
InventorsSangkwon MOON, Kyung Ho KIM, Jihong KIM, Jaeyong JEONG
Life of this patent
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Abstract
A method of operating a memory device includes: determining an erase mode based on a number of erase cycles performed on a memory block and an erase voltage utilized to perform each erase cycle; and setting an erase voltage level for executing an erase operation on the memory block based on the determined erase mode.
Claims32
-16. (canceled)
A method of operating a memory device, the method comprising:
- selecting an erase mode from among a plurality of erase modes based on a cumulative effective wear level associated with a memory block, the cumulative effective wear level being an aggregate sum of effective wear levels associated with erase cycles performed on the memory block, each of the effective wear levels being indicative of an erase voltage used to perform an erase cycle on the memory block;
- and
- setting an erase voltage level for executing an erase operation on the memory block based on the selected erase mode.
A memory system comprising:
- a non-volatile memory including a memory block;
- and
- a storage controller including a dynamic access manager, the dynamic access manager being configured to,
- select an erase mode from among a plurality of erase modes based on a cumulative effective wear level associated with the memory block, the cumulative effective wear level being an aggregate sum of effective wear levels associated with erase cycles performed on the memory block, each of the effective wear levels being indicative of an erase voltage used to perform an erase cycle on the memory block, and
- set an erase voltage level for executing an erase operation on the memory block based on the selected erase mode.
A method of reading data from a memory block of a memory device, the method comprising:
- detecting a write mode of the memory block in response to a request to read data from the memory block;
- setting a read voltage based on the detected write mode of the memory block;
- and
- reading the data from the memory block using the set read voltage.
A memory system comprising:
- a non-volatile memory including a memory block;
- and
- a storage controller configured to,
- detect a write mode of the memory block in response to a request to read data from the memory block,
- set a read voltage based on the detected write mode of the memory block, and
- read the data from the memory block using the set read voltage.
-52. (canceled)
A method for writing data to a memory device including a plurality of memory blocks, the method comprising:
- selecting, in response to a received write command, a subset of the plurality of memory blocks based on cumulative effective wear levels associated with the plurality of memory blocks;
- selecting a first memory block from among the subset of memory blocks based on a write operation parameter associated with the received write command;
- setting a write voltage for writing data to the first memory block based on an erase mode associated with the first memory block;
- and
- writing data to the first memory block using the set write voltage.
-88. (canceled)
Dependencies are inferred from the claim text.