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US 2014/0369121 A1Published application
Semiconductor device
AssigneeSK hynix Inc.
InventorsHyun Sub KIM, Jung Won PARK
Life of this patent
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Abstract
Disclosed is a semiconductor device, including: an active region defined in a shape extended in at least four different directions in a semiconductor substrate; and gates of first to fourth transistors formed on extended portions of the active region, respectively, in which the first to fourth transistors share one junction area.
Claims20
A semiconductor device, comprising:
- an active region defined in a shape extended in at least four different directions in a semiconductor substrate;
- and
- gates of first to fourth transistors formed on extended portions of the active region, respectively,
- wherein the first to fourth transistors share one junction area.
1 more element
A semiconductor device, comprising:
- a plurality of memory blocks;
- and
- a plurality of switch units for connecting word lines of the plurality of memory blocks and a global word line,
- wherein each of the plurality of switch units includes four or more pass transistors, and the four pass transistors share one junction area.
1 more element
A semiconductor memory device, comprising:
- a memory unit including a plurality of memory blocks;
- a voltage providing unit configured to generate operation voltages;
- a block selection signal generation unit configured to generate control signals for selecting the plurality of memory blocks;
- a switch unit configured to transmit the operation voltage to the plurality of memory block in response to the control signals,
- wherein each of the plurality of switch units includes first to fourth pass transistors formed in a cross (+) shaped active region and disposed to share one junction area.
2 more elements
Dependencies are inferred from the claim text.