Multiple step programming in a memory device
AssigneeMicron Technology, Inc.
InventorsViolante Moschiano, Mason Jones
Life of this patent
Estimating the term…
Abstract
Method of operating a memory include programming a memory cell and reading the memory cell to determine a programmed threshold voltage of the memory cell. If the programmed threshold voltage is within a threshold voltage distribution of a plurality of threshold voltage distributions, the memory cell is reprogrammed, and if the programmed threshold voltage is not within a threshold voltage distribution of the plurality of threshold voltage distributions, the memory cell is allowed to remain at the programmed threshold voltage.
Claims20
A method of operating a memory, comprising:
- programming a memory cell;
- reading the memory cell to determine a programmed threshold voltage of the memory cell;
- if the programmed threshold voltage is within a threshold voltage distribution of a plurality of threshold voltage distributions, reprogramming the memory cell;
- and
- if the programmed threshold voltage is not within a threshold voltage distribution of the plurality of threshold voltage distributions, leaving the memory cell at the programmed threshold voltage.
A method of operating a memory, comprising:
- applying programming pulses to a memory cell until it reaches a desired threshold voltage corresponding to a particular data state of a plurality of data states;
- reading the memory cell to determine a programmed threshold voltage of the memory cell;
- if the programmed threshold voltage is within a threshold voltage distribution corresponding to any data state of the plurality of data states, applying programming pulses to the memory cell until it reaches a second desired threshold voltage;
- and
- if the programmed threshold voltage is not within a threshold voltage distribution corresponding to any data state of the plurality of data states, leaving the memory cell at the programmed threshold voltage.
A method of operating a memory, comprising:
- programming a group of memory cells until each memory cell of the group of memory cells reaches a respective desired threshold voltage;
- reading the group of memory cells to determine programmed threshold voltages of the memory cells of the group of memory cells;
- determining whether the programmed threshold voltages of the memory cells of the group of memory cells are within any threshold voltage distribution of a plurality of threshold voltage distributions;
- for those memory cells of the group of memory cells whose programmed threshold voltages are within any threshold voltage distribution of the plurality of threshold voltage distributions, programming those memory cells until each of those memory cells reaches a second respective desired threshold voltage;
- and
- for those memory cells of the group of memory cells whose programmed threshold voltages are not within any threshold voltage distribution of the plurality of threshold voltage distributions, leaving each of those memory cells at their respective programmed threshold voltage.
Dependencies are inferred from the claim text.