Phase-change memory cells
AssigneeInternational Business Machines Corporation
InventorsSangBum Kim, Daniel Krebs, Chung Hon Lam, Charalampos Pozidis
Life of this patent
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Abstract
Improved phase-change memory cells are provided for storing information in a plurality of programmable cell states. A phase-change material is located between first and second electrodes for applying a read voltage to the phase-change material to read the programmed cell state. An electrically-conductive component extends from one electrode to the other in contact with the phase-change material. The resistance presented by this component to a cell current produced by the read voltage is less than that of the amorphous phase and greater than that of the crystalline phase of the phase-change material in any of the cell states.
Claims16
A phase-change memory cell for storing information in a plurality of programmable cell states, the phase-change memory cell comprising:
- a phase-change material located between a first electrode and a second electrode for applying a read voltage to said phase-change material to read a programmed cell state;
- and
- an electrically-conductive component extending from said first electrode to said second electrode and in contact with said phase-change material;
- wherein the resistance presented by said electrically-conductive component to a cell current produced by said read voltage is less than that of the amorphous phase and greater than that of the crystalline phase of said phase-change material.
A memory device comprising:
- a one or more of phase-change memory cells, wherein said one or more phase-change memory cells comprises:
- a phase-change material located between a first electrode and a second electrode for applying a read voltage to said phase-change material to read a programmed cell state;
- and an electrically-conductive component extending from said first electrode to said second electrode and in contact with said phase-change material;
- wherein the resistance presented by said electrically-conductive component to a cell current produced by said read voltage is less than that of the amorphous phase and greater than that of the crystalline phase of said phase-change material;
- and
- a read/write controller for reading and writing data in the memory cells.
Dependencies are inferred from the claim text.