Phase-change memory cells

A memory device comprising:

• an array of phase-change memory cells including:
• a phase-change material located between a first electrode and a second electrode for applying a read voltage to the phase-change material to read a programmed cell state;
• and
• an electrically-conductive component extending in a direction between the first and second electrodes in contact with the phase-change material and arranged to present, to a cell current produced by the read voltage, a lower-resistance current path than an amorphous phase of the phase-change material in any of the plurality of programmable cell states, said current path having a length dependent on a size of said amorphous phase,
• wherein a volume of the electrically-conductive component is greater than about half that of said phase-change material;
• and
• a read/write controller for reading and writing data in the phase-change memory cells.

A method for forming a phase-change memory cell for storing information in a plurality of programmable cell states, the method comprising:

• forming a first electrode and a second electrodes having a phase-change material located there between;
• and
• forming an electrically-conductive component having a volume which is greater than half that of said phase-change material,
• wherein said electrically-conductive component extends in a direction between the first and second electrodes in contact with the phase-change material and is arranged to present, to a cell current produced by a read voltage applied via the first and second electrodes to read a programmed cell state in use, a lower-resistance current path than an amorphous phase of the phase-change material in any of said plurality of programmable cell states, said current path having a length dependent on a size of said amorphous phase.