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US 2014/0369107 A1Published application
Structures for resistance random access memory and methods of forming the same
AssigneeMicron Technology, Inc.
InventorsChandra Mouli, Roy Meade
Life of this patent
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Abstract
Memory cells and methods of forming the same and devices including the same. The memory cells have first and second electrodes. An amorphous semiconductor material capable of electronic switching and having a first band gap is between the first and second electrodes. A material is in contact with the semiconductor material and having a second band gap, the second band gap greater than the first band gap.
Claims29
1-55. (canceled)
A memory device comprising:
- at least one memory cell, the at least one memory cell comprising:
- first and second electrodes;
- a first semiconductor material between the first and second electrodes, the first semiconductor material being amorphous, capable of electronic switching, having a first band gap and having a crystallization temperature greater than a temperature the first semiconductor material is exposed to during the memory cell manufacture process;
- and
- a material having a second band gap in contact with the first semiconductor material, the second band gap being greater than the first band gap.
2 more elements
A memory device comprising:
- at least one memory cell comprising:
- first and second electrodes;
- a first semiconductor material between the first and second electrodes, the first semiconductor material being amorphous, capable of electronic switching, and having a first band gap;
- and
- a material having a second band gap in contact with the first semiconductor material, the second band gap being greater than the first band gap;
- and
- a reset circuit electrically coupled to the at least one memory cell to apply current to reset the first semiconductor material to an amorphous state before the operation of the memory cell.
4 more elements
Dependencies are inferred from the claim text.