In-line measurement of transistor device cut-off frequency

A method of determining cut-off frequency for a transistor device within a semiconductor wafer, the method comprising:

• forming a transistor device within a region of the semiconductor wafer;
• biasing the transistor device for enabling a substantially linear amplification;
• applying a radio frequency signal having a frequency value to the biased transistor device to generate an amplified radio frequency signal;
• applying the radio frequency signal to a power convertor for converting the radio frequency signal into a first DC voltage;
• applying the radio frequency signal and the amplified radio frequency signal to the power convertor for converting the amplified radio frequency signal into a second DC voltage;
• and
• determining the cut-off frequency of the transistor device based on the frequency value, a ratio value corresponding to the first and the second DC voltage, and a ratio value corresponding to source and load resistance values associated with the transistor device.

A method of determining cut-off frequency for a transistor device within a semiconductor wafer, the method comprising:

• forming, within a dicing street region of the semiconductor wafer, a biasing circuit for determining base current settings for the transistor device, wherein the base current settings enable a substantially linear amplification by the transistor device;
• forming, within the dicing street region of the semiconductor wafer, a radio frequency signal source for generating a radio frequency signal having a frequency value, wherein the biased transistor device generates an amplified radio frequency signal based on receiving the radio frequency signal as an input signal;
• forming, within the dicing street region of the semiconductor wafer, a power convertor that receives the radio frequency signal and generates a first DC voltage, and receives both the radio frequency signal and the amplified radio frequency signal and generates a second DC voltage;
• and
• determining the cut-off frequency of the transistor device based on the frequency value, a ratio value corresponding to the first and the second DC voltage, and a ratio value corresponding to source and load resistance values associated with the transistor device.