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US 2014/0368224 A1Published application
Test circuit and method for semiconductor device
AssigneeSK hynix Inc.
InventorDong-Uk LEE
Life of this patent
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Abstract
A semiconductor device includes a first die, a second die coupled to the first die through a Through-Silicon-Via (TSV), and a test circuit suitable for measuring a resistance of the TSV by controlling an amount of current flowing through the TSV.
Claims15
A semiconductor device comprising:
- a first die;
- a second die coupled to the first die through a Through-Silicon-Via (TSV);
- and
- a test circuit suitable for measuring a resistance of the TSV by controlling an amount of current flowing through the TSV.
1 more element
A semiconductor device comprising:
- a first die;
- a plurality of second dies, each of which is coupled to the first die through a Through-Silicon-Via (TSV);
- a current source suitable for supplying a first current in response to a first control signal and for supplying a second current in response to a second control signal, the first current and the second current flows through the TSV, and the current source is disposed in each of the second dies;
- a current sink suitable for generating a measurement voltage, which has a level that depends on the first current or depends on both of the first current and the second current, the current sink is disposed in the first die;
- and
- a resistance measurer suitable for measuring a resistance of the TSV based on the measurement voltage.
3 more elements
A method for measuring a resistance of a Through-Silicon-Via (TSV) in a semiconductor device including a first die and a second die that are electrically connected to each other through the TSV, the method comprising:
- supplying a first current to the first die from the second die through the TSV;
- measuring the first current through the TSV at the first die;
- supplying the first current and a second current to the first die from the second the through the TSV;
- measuring a sum of the first and the second current through the TSV at the first die;
- and
- obtaining the resistance of the TSV based on a difference between the measured first current and the measured sum of the first and second current.
3 more elements
Dependencies are inferred from the claim text.