Inspection apparatus and inspection method

An inspection apparatus comprising:

• an electron beam applying unit configured to generate an electron beam and obliquely apply the electron beam to a sample at a first voltage;
• a voltage applying unit configured to apply a second voltage to the sample, a polarity of the second voltage being opposite to that of the first voltage and an absolute value of the second voltage exceeding an absolute value of the first voltage;
• a substantially flat component which comprises a lattice pattern and is provided at a position where the electron beam specularly reflected by the second voltage before reaching the sample is focused;
• a first detector configured to detect a secondary electron generated from the component which the specularly reflected electron beam has entered and to output a first signal;
• a potential distribution acquiring unit configured to process the first signal to acquire a potential distribution in a specular reflection surface on which the electron beam is specularly reflected;
• and
• an electric field/magnetic field deflector located between the electron beam applying unit and the sample and configured to control a locus of the electron beam so as to make the electron beam from the electron beam applying unit emit in a direction substantially perpendicular to the sample and so as to make the electron beam from the sample emit straight,
• wherein the component is located closer to the electron beam applying unit than the electric field/magnetic field deflector.

An inspection method comprising:

• generating an electron beam and applying the electron beam to a sample at a first voltage;
• applying a second voltage to the sample, a polarity of the second voltage being opposite to that of the first voltage and an absolute value of the second voltage exceeding an absolute value of the first voltage;
• acquiring locus information regarding an emission direction of the electron beam specularly reflected by the second voltage before reaching the sample;
• and
• calculating a potential distribution in the surface of the sample from the locus information.