Light-emitting metal-oxide-semiconductor devices and associated systems, devices, and methods
AssigneeMicron Technology, Inc.
InventorsMartin F. Schubert, Vladimir Odnoblyudov
Life of this patent
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Abstract
Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.
Claims33
A light emitter device, comprising:
- a semiconductor structure including a first semiconductor material and a second semiconductor material, wherein the second semiconductor material includes an active region having a bandgap configured to emit light;
- and
- an electrode operably coupled to the second semiconductor material, wherein the electrode includes a conductive contact and a dielectric material between the active region and the conductive contact, wherein the electrode is configured to—
- accumulate charge in the active region, and
- draw a discharge current through the first semiconductor material to discharge at least a portion of the accumulated charge.
A solid state transducer (SST) system, comprising:
- a light emitter device including a capacitor, a conductive contact, and an active region between the capacitor and the conductive contact;
- a waveform generator having a first terminal operably coupled to the capacitor and a second terminal operably coupled to the conductive conduct, wherein the waveform generator is configured to generate a bias signal that alternatingly charges and discharges the capacitor to emit electromagnetic radiation from the active region.
An ultraviolet (UV) light emitter device, comprising:
- a metal-oxide-semiconductor (MOS) capacitor;
- an active region operably coupled to the MOS capacitor, wherein the active region includes at least one quantum well configured to store first charge carriers under a first bias;
- a bulk semiconductor material operably coupled to the active region, wherein the bulk semiconductor material is configured to provide second charge carriers to the active region such that the active region emits UV light.
A method for operating a light emitter device, comprising:
- charging a capacitor operably coupled to an active region;
- discharging the capacitor to emit electromagnetic radiation from the active region.
A method for producing ultraviolet (UV) light, comprising:
- biasing a metal-oxide (MOS) capacitor with at least a first voltage, wherein the MOS capacitor is operably coupled to an active region having energy bands configured for emitting UV light;
- and
- biasing the MOS capacitor with at least a second voltage to emit the UV light from the active region.
Dependencies are inferred from the claim text.