# US 2014/0360430 A1 · Wafer carrier having thermal uniformity-enhancing features

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- Number: US 2014/0360430 A1
- Document ID: US20140360430A1
- Status: Published application
- Kind: A1
- Application number: 14/297,244
- Filed: 2014-06-05
- Published: 2014-12-11
- Earliest claimed: 2013-06-05
- Applicants: Veeco Instruments, Inc.
- Inventors: Eric Armour; Sandeep Krishnan; Alex Zhang; Bojan Mitrovic; Alexander Gurary
- Web page: https://patentgrep.com/patent/US20140360430A1

## CPC

- C30B 25/12: Substrate holders or susceptors
- C23C 16/4584: {the substrate being rotated}
- C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices}
- C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence)
- C30B 25/105: {by irradiation or electric discharge}
- Y10T 29/49826: Assembling or joining
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A wafer carrier assembly for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition (CVD), the wafer carrier assembly includes a wafer carrier body formed symmetrically about a central axis, and including a generally planar top surface that is situated perpendicularly to the central axis and a planar bottom surface that is parallel to the top surface. At least one wafer retention pocket is recessed in the wafer carrier body from the top surface. Each of the at least one wafer retention pocket includes a floor surface and a peripheral wall surface that surrounds the floor surface and defines a periphery of that wafer retention pocket. At least one thermal control feature includes an interior cavity or void formed in the wafer carrier body and is defined by interior surfaces of the wafer carrier body.

## Claims

### Claim 1

A wafer carrier assembly for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition (CVD), the wafer carrier assembly comprising:
a wafer carrier body formed symmetrically about a central axis, and including a generally planar top surface that is situated perpendicularly to the central axis and a planar bottom surface that is parallel to the top surface;
at least one wafer retention region in the wafer carrier body, each of the at least one wafer retention region including a bore through the wafer carrier body extending from the top surface through the bottom surface and defined by an interior peripheral surface of the wafer carrier body, the wafer retention region further including a support shelf recessed below the top surface and situated along the interior peripheral surface, the support shelf being adapted to retain a wafer within the wafer retention region when subjected to rotation about the central axis.

### Claim 2 (depends on 1)

The wafer carrier assembly of claim 1, further comprising:
a support ring is formed from a material having a thermal conductivity that is less than the thermal conductivity of the wafer carrier body, the support ring being situated on the support shelf and arranged to insulate a wafer from the interior peripheral surface.

### Claim 3 (depends on 1)

The wafer carrier assembly of claim 1, wherein the bore has a larger opening at the bottom surface than at the top surface, and wherein the interior peripheral surface has a frustoconical form.

### Claim 4

A wafer carrier assembly for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition (CVD), the wafer carrier assembly comprising:
a wafer carrier body formed symmetrically about a central axis, and including a generally planar top surface that is situated perpendicularly to the central axis and a planar bottom surface that is parallel to the top surface;
at least one wafer retention pocket recessed in the wafer carrier body from the top surface, each of the at least one wafer retention pocket including a floor surface and a peripheral wall surface that surrounds the floor surface and defines a periphery of that wafer retention pocket, the wafer retention pocket being adapted to retain a wafer within the periphery when subjected to rotation about the central axis;
at least one thermal control feature that includes an interior cavity formed in the wafer carrier body and defined by interior surfaces of the wafer carrier body, the interior cavity being enclosed by at the bottom surface and at least one of the top surface and the floor surface;
wherein the at least one thermal control feature has a lower thermal conductivity than the wafer body.

### Claim 5 (depends on 4)

The wafer carrier assembly of claim 4, wherein the at least one thermal control feature is situated between the bottom surface and the top surface but not between the bottom surface and the floor surface.

### Claim 6 (depends on 4)

The wafer carrier assembly of claim 4, wherein the at least one thermal control feature contains a gas.

### Claim 7 (depends on 4)

The wafer carrier assembly of claim 4, wherein the at least one thermal control feature has a height defined along an axis parallel to the central axis, and a width defined perpendicularly to the central axis, and wherein the width of the at least one thermal control feature is greater than the height.

### Claim 8 (depends on 4)

The wafer carrier assembly of claim 4, wherein the at least one thermal control feature is enclosed on all sides by the wafer carrier body.

### Claim 9 (depends on 4)

The wafer carrier assembly of claim 4, wherein the at least one thermal control feature comprises a plurality of layers of a solid material.

### Claim 10 (depends on 4)

The wafer carrier assembly of claim 4, wherein the at least one thermal control feature comprises a channel that permits gas flow, the channel including a first opening and a second opening to an exterior of the wafer carrier body.

### Claim 11

Apparatus for growing epitaxial layers on one or more wafers by chemical vapor deposition (CVD), comprising:
a reaction chamber;
a rotatable spindle having an upper end disposed inside the reaction chamber;
a wafer carrier for transporting and providing a support for the one or more wafers, the wafer carrier being centrally and detachably mounted on the upper end of the spindle and being in contact therewith at least in the course of a CVD process; and
a radiant heating element disposed under the wafer carrier for heating thereof;
wherein the wafer carrier comprises
a wafer carrier body formed symmetrically about a central axis, and including a generally planar top surface that is situated perpendicularly to the central axis and a planar bottom surface that is parallel to the top surface;
at least one wafer retention pocket recessed in the wafer carrier body from the top surface, each of the at least one wafer retention pocket including a floor surface and a peripheral wall surface that surrounds the floor surface and defines a periphery of that wafer retention pocket, the wafer retention pocket being adapted to retain a wafer within the periphery when subjected to rotation about the central axis;
at least one thermal control feature that includes an interior cavity formed in the wafer carrier body and defined by interior surfaces of the wafer carrier body, the interior cavity being enclosed by at the bottom surface and at least one of the top surface and the floor surface;
wherein the at least one thermal control feature has a lower thermal conductivity than the wafer body such that heat flow in the wafer carrier body caused by operation of the radiant heating element tends to concentrate in regions other than the regions above the at least one thermal control feature.

### Claim 12

A method for assembling a wafer carrier for growing epitaxial layers on one or more wafers by chemical vapor deposition (CVD), the method comprising:
forming a wafer carrier body symmetrically about a central axis, including forming a generally planar top surface that is situated perpendicularly to the central axis and forming a planar bottom surface that is parallel to the top surface;
forming at least one wafer retention pocket recessed in the wafer carrier body from the top surface, each of the at least one wafer retention pocket including a floor surface and a peripheral wall surface that surrounds the floor surface and defines a periphery of that wafer retention pocket, the wafer retention pocket being adapted to retain a wafer within the periphery when subjected to rotation about the central axis;
situating a thermally-insulating spacer at least partially in the at least one wafer retention pocket to maintain a spacing between the peripheral wall surface and the wafer, the spacer being constructed from a material having a thermal conductivity less than a thermal conductivity of the wafer carrier body such that the spacer limits heat conduction from portions of the wafer carrier body to the wafer; and
forming a spacer retention feature in the wafer carrier body such that the spacer retention feature engages with the spacer and provides a surface oriented to prevent centrifugal movement of the spacer when subjected to rotation about the central axis.

### Claim 13

A wafer carrier assembly for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition (CVD), the wafer carrier assembly comprising:
a wafer carrier body formed symmetrically about a central axis, and including a generally planar top surface that is situated perpendicularly to the central axis and a generally planar bottom surface that is parallel to the top surface;
at least one wafer retention pocket recessed in the wafer carrier body from the top surface, each of the at least one wafer retention pocket including a floor surface and a peripheral wall surface that surrounds the floor surface and defines a periphery of that wafer retention pocket, the wafer retention pocket being adapted to retain a wafer within the periphery when subjected to rotation about the central axis;
at least one thermal control feature that includes a recess formed in bottom surface of the wafer carrier body beneath regions of the wafer carrier other than the at least one wafer retention pocket.

### Claim 14 (depends on 13)

The wafer carrier assembly of claim 13, wherein the recess of the thermal control feature has a recessed surface generally parallel with the top surface, the recessed surface being flat.

### Claim 15 (depends on 13)

The wafer carrier assembly of claim 13, wherein the recess of the thermal control feature has a recessed surface generally parallel with the top surface, the recessed surface having a curvature.