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AssigneeSociete Francaise de Detecteurs Infrarouges-Sofradir
InventorSylvain Paltrier
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A method for producing the growth of a semiconductor material, in particular of type II-VI, uses a melt of the semiconductor placed in a sealed bulb under vacuum or under controlled atmosphere, the bulb being subjected to a sufficient temperature gradient for first maintaining the melt in the liquid state, then causing its progressive crystallization from the surface towards the bottom. The method further comprises an element capable of floating on the surface of the melt, and equipped with a substantially central bore, intended for receiving a seed crystal for permitting the nucleation leading to the preparation of a seed crystal, and also supporting the seed crystal above the melt while maintaining it in contact with the melt in order to permit the continued crystallization from the seed crystal by lowering the temperature gradient.
(canceled)
The method for growing a semiconductor material according to claim 11, wherein the bore of the support element has a frustoconical shape, and a small base of the bore is directed downwards and terminates in the melt, and a large base of the bore is directed upwards when the support elements floats on the melt.
The method for growing a semiconductor material according to claim 11, wherein said seed crystal, is directly supported by the bore so that the seed crystal is in contact with the melt but without allowing the seed crystal to be completely or almost completely immersed in the melt.
The method for growing a semiconductor material according to claim 11, further comprising producing the support element from a chemically and thermally inert refractory material selected from the group comprising silica, alumina, silicon carbide, aluminum nitride and carbon in all forms.
The method for growing a semiconductor material according to claim 11, further comprising sizing the support element to substantially occupy the whole top surface of the melt, with the exception of the bore, in order to minimize effects of heat radiation from the melt.
A method for growing a semiconductor material of type II-VI, comprising:
Dependencies are inferred from the claim text.