Model-based process simulation systems and methods
AssigneeASML Netherlands B.V.
InventorsYu CAO, Wenjin SHAO, Ronaldus Johannes Gijsbertus GOOSSENS, Jun YE, James Patrick KOONMEN
Life of this patent
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Abstract
Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.
Claims20
A method for lithographic process simulation implemented by a computer, comprising:
- maintaining a sensitivity model that describes differences in imaging results attributable to differences in scanner settings for one scanner;
- and
- generating, by the computer, simulated wafer contours using the sensitivity model.
A method for calibrating a lithographic model, wherein the method is implemented by a computer, the method comprising:
- performing simulations of a lithographic process for a plurality of scanner settings for one scanner, wherein a sensitivity model characterizes scanner setting related differences for the one scanner;
- identifying differences between simulated contours produced by the simulations and corresponding measured contours obtained from the plurality of scanner settings under the simulated conditions;
- and
- optimizing, using the computer, parameters of the sensitity model based on the identified differences,
- wherein the sensitivity model describes differences in imaging results when using a second set of the scanner settings, wherein the differences in imaging results are attributable to differences in lithographic process parameters between the second set of the scanner settings and a different first set of the scanner settings.
A computer program product comprising a computer readable storage medium having instructions recorded thereon, which when executed by a computer perform a method for lithographic process simulation implemented by a computer, the method comprising:
- maintaining a sensitivity model that describes differences in imaging results attributable to differences in scanner settings for one scanner;
- and
- generating, by the computer, simulated wafer contours using the sensitivity model.
Dependencies are inferred from the claim text.