Nonvolatile memory and related reprogramming method
AssigneeSamsung Electronics Co., Ltd.
InventorTAE-YOUNG KIM
Life of this patent
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Abstract
A method of reprogramming a nonvolatile memory device, comprising setting up bit lines of selected memory cells according to logic values of first and second latches of a page buffer connected to the bit lines, supplying a program pulse to the selected memory cells, performing a program verify operation on the selected memory cells using the first and second latches, and performing a predictive program operation on the selected memory cells according to a result of the program verify operation. In the predictive program operation, bit lines of the selected memory cells are setup according to a logic value of a third latch of the page buffer that corresponds to each of the selected memory cells.
Claims20
A method of reprogramming a nonvolatile memory device, comprising:
- setting up bit lines of selected memory cells according to logic values of first and second latches of a page buffer connected to the bit lines;
- supplying a program pulse to the selected memory cells;
- performing a program verify operation on the selected memory cells using the first and second latches;
- and
- performing a predictive program operation on the selected memory cells according to a result of the program verify operation,
- wherein in the predictive program operation, bit lines of the selected memory cells are setup according to a logic value of a third latch of the page buffer that corresponds to each of the selected memory cells.
A nonvolatile memory device comprising:
- a cell array comprising a buffer area and a main area, wherein data stored in the buffer area is written to the main area by multiple reprogram steps;
- a row decoder configured to select a wordline of the cell array according to a row address;
- a page buffer configured to store two-or-more-page data read from the buffer area, wherein the page buffer writes the two-or-more-page data to selected memory cells of the main area based on the reprogram steps;
- and
- control logic configured to control the row decoder and the page buffer to perform a verify operation with reference to first-page and second-page data and to program three-or-more-page data with reference to third-page data in a first of the reprogram steps.
Dependencies are inferred from the claim text.