Semiconductor device manufacturing method, substrate processing apparatus and recording medium
AssigneeC/O Hitachi Kokusai Electric Inc.
InventorsSatoshi SHIMAMOTO, Yoshiro HIROSE, Atsushi SANO, Tsukasa KAMAKURA, Takaaki NODA
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Abstract
A semiconductor device manufacturing method includes forming a thin film containing silicon, oxygen, carbon and a specified Group III or Group V element on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding and a first catalytic gas to the substrate; supplying an oxidizing gas and a second catalytic gas to the substrate; and supplying a modifying gas containing the specified Group III or Group V element to the substrate.
Claims19
A semiconductor device manufacturing method, comprising:
- forming a thin film containing silicon, oxygen, carbon and a specified Group III or Group V element on a substrate by performing a cycle a predetermined number of times, the cycle comprising:
- supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding and a first catalytic gas to the substrate;
- supplying an oxidizing gas and a second catalytic gas to the substrate;
- and
- supplying a modifying gas containing the specified Group III or Group V element to the substrate.
A substrate processing apparatus, comprising:
- a process chamber configured to accommodate therein a substrate;
- a precursor gas supply system configured to supply a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding into the process chamber;
- an oxidizing gas supply system configured to supply an oxidizing gas into the process chamber;
- a catalytic gas supply system configured to supply first and second catalytic gases into the process chamber;
- a modifying gas supply system configured to supply a modifying gas containing a specified Group III or Group V element into the process chamber;
- and
- a control unit configured to control the precursor gas supply system, the oxidizing gas supply system, the catalytic gas supply system and the modifying gas supply system such that a process of forming a thin film containing silicon, oxygen, carbon and the specified Group III or Group V element on the substrate is carried out by performing a cycle a predetermined number of times, the cycle comprising:
- supplying the precursor gas and the first catalytic gas to the substrate accommodated within the process chamber;
- supplying the oxidizing gas and the second catalytic gas to the substrate accommodated within the process chamber;
- and supplying the modifying gas to the substrate.
A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a thin film containing silicon, oxygen, carbon and a specified Group III or Group V element on a substrate by performing a cycle a predetermined number of times, the cycle comprising:
- supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding and a first catalytic gas to the substrate accommodated within a process chamber;
- supplying an oxidizing gas and a second catalytic gas to the substrate accommodated within the process chamber;
- and
- supplying a modifying gas containing the specified Group III or Group V element to the substrate.
Dependencies are inferred from the claim text.