Cmp compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity
AssigneeCabot Microelectronics Corporation
InventorsTina LI, Kevin Dockery, Renhe Jia, Jeffrey Dysard
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Abstract
The invention provides a chemical-mechanical polishing composition containing a ceria abrasive and a polymer of formula I: wherein X1 and X2, Y1 and Y2, Z1 and Z2, R1, R2, R3, and R4, and m are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
Claims21
A chemical-mechanical polishing composition comprising:
- (a) about 0.05 wt. % to about 10 wt. % of a ceria abrasive,
- (b) about 10 ppm to about 1000 ppm of a polymer of formula I:
- wherein X1 and X2 are independently selected from O, C, and S,
- Y1 and Y2 are independently selected from OH, C1-C10 alkyl, and a group of the formula:
- CxHyFz,
- R1, R2, R3, and R4 are independently selected from hydrogen, F, C1-C10 alkyl, C6-C10 aryl, and heteroaromatic,
- x is an integer of 1 to about 20,
- z is an integer of 1 to about 41,
- m is an integer of about 3 to about 500, and
- at least one of Y1 or Y2 is CxHyFz or at least one of R1-R4 is F, and
- (c) water,
- wherein the polishing composition has a pH of about 1 to about 4.5.
A method of chemically-mechanically polishing a substrate comprising:
- (i) contacting a substrate with a polishing pad and a chemical-mechanical polishing composition comprising:
- (a) about 0.05 wt. % to about 10 wt. % of a ceria abrasive,
- (b) about 10 ppm to about 1000 ppm of a polymer of formula I:
- wherein X1 and X2 are independently selected from O, C, and S,
- Y1 and Y2 are independently selected from OH, C1-C10 alkyl, and a group of the formula:
- CxHyFz,
- R1, R2, R3, and R4 are independently selected from hydrogen, F, C1-C10 alkyl, C6-C10 aryl, and heteroaromatic,
- x is an integer of 1 to about 20,
- z is an integer of 1 to about 41,
- m is an integer of about 3 to about 500, and
- at least one of Y1 or Y2 is CxHyFz or at least one of R1-R4 is F, and
- (c) water,
- wherein the polishing composition has a pH of about 1 to about 4.5,
- (ii) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate, and
- (iii) abrading at least a portion of the substrate to polish the substrate.
Dependencies are inferred from the claim text.