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US 2014/0349482 A1Published application
Method of forming fin-shaped structure
AssigneeUnited Microelectronics Corp.
InventorsPo-Chao Tsao, Chien-Ting Lin
Life of this patent
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Abstract
A method of forming fin-shaped structures includes the following steps. A plurality of spacers is formed on a substrate. The substrate is etched by using the spacers as hard masks to form a plurality of fin-shaped structures in the substrate. A cutting process is then performed to remove parts of the fin-shaped structures and the spacers formed on the removed parts.
Claims14
A method of forming fin-shaped structures, comprising:
- forming a plurality of spacers on a substrate;
- etching the substrate by using the spacers to serve as hard masks to form a plurality of fin-shaped structures in the substrate;
- and
- performing a cutting process to remove parts of the fin-shaped structures and the spacers formed on the removed parts.
1 more element
Dependencies are inferred from the claim text.