Method including a removal of a hardmask from a semiconductor structure and rinsing the semiconductor structure with an alkaline rinse solution

A method, comprising:

• providing a semiconductor structure, the semiconductor structure comprising an electrically conductive feature comprising a first metal, a dielectric material provided over said electrically conductive feature, a hardmask comprising a hardmask material, said hardmask being provided over said dielectric material, and an opening provided in said dielectric material and said hardmask, a portion of said electrically conductive feature being exposed at a bottom of said opening;
• removing said hardmask, the removal of said hardmask comprising exposing said semiconductor structure to an etching solution comprising hydrogen peroxide and a corrosion inhibitor;
• and
• after the removal of said hardmask, rinsing said semiconductor structure, wherein rinsing said semiconductor structure comprises exposing said semiconductor structure to an alkaline rinse solution, wherein both said etching solution and said rinse solution comprise the same buffering agent.